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BC328 Scheda tecnica(PDF) 3 Page - Unisonic Technologies |
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BC328 Scheda tecnica(HTML) 3 Page - Unisonic Technologies |
3 / 4 page BC327/328 PNP EPITAXIAL SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 3 of 4 www.unisonic.com.tw QW-R201-038.B TYPICAL CHARACTERISTICS 1 10 100 1000 Collector Current, IC (mA) Figure 3. DC Current Gain -0.1 -1.0V VCE=-2.0V PULSE -1 -10 -100 -1000 -0.1 -10 -1 -1000 -0.01 -0.1 -1 -10 Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Collector Current, IC(mA) VBE(sat) VCE(sat) IC=10IB PULSE -100 -0.1 -10 -100 -1000 Base-Emitter On Voltage, VBE (V) Figure 5. Base-Emitter On Voltage -0.4 VCE=-1V PULSE -0.5 -0.6 -0.8 -0.9 -1 -0.7 10 100 1000 Collector Current, IC (mA) Figure 6. Gain Bandwidth Product -1 VCE=-0.5V -1000 -100 |
Codice articolo simile - BC328_15 |
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Descrizione simile - BC328_15 |
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