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IRLS3034-7PPBF Scheda tecnica(PDF) 2 Page - International Rectifier

Il numero della parte IRLS3034-7PPBF
Spiegazioni elettronici  Uninterruptible Power Supply
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Produttore elettronici  IRF [International Rectifier]
Homepage  http://www.irf.com
Logo IRF - International Rectifier

IRLS3034-7PPBF Scheda tecnica(HTML) 2 Page - International Rectifier

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Notes:
 Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 240A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
(Refer to AN-1140)
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by TJmax, starting TJ = 25°C, L = 0.010mH
RG = 25Ω, IAS = 220A, VGS =10V. Part not recommended for use
above this value .
S
D
G
„ ISD ≤ 220A, di/dt ≤ 1240A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
… Pulse width ≤ 400µs; duty cycle ≤ 2%.
† Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
‰ Rθ is measured at TJ approximately 90°C.
Š RθJC value shown is at time zero.
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
40
–––
–––
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.035 –––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
1.0
1.4
m
1.2
1.7
VGS(th)
Gate Threshold Voltage
1.0
–––
2.5
V
IDSS
Drain-to-Source Leakage Current
–––
–––
20
µA
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
RG
Internal Gate Resistance
–––
1.9
–––
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
gfs
Forward Transconductance
370
–––
–––
S
Qg
Total Gate Charge
–––
120
180
nC
Qgs
Gate-to-Source Charge
–––
32
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
71
–––
Qsync
Total Gate Charge Sync. (Qg - Qgd)
–––
49
–––
td(on)
Turn-On Delay Time
–––
71
–––
ns
tr
Rise Time
–––
590
–––
td(off)
Turn-Off Delay Time
–––
94
–––
tf
Fall Time
–––
200
–––
Ciss
Input Capacitance
––– 10990 –––
pF
Coss
Output Capacitance
–––
2030
–––
Crss
Reverse Transfer Capacitance
–––
1100
–––
Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 2520 –––
Coss eff. (TR) Effective Output Capacitance (Time Related)h ––– 3060 –––
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
––– 380c
A
(Body Diode)
ISM
Pulsed Source Current
–––
–––
1540
A
(Body Diode)
d
VSD
Diode Forward Voltage
–––
–––
1.3
V
trr
Reverse Recovery Time
–––
46
–––
ns
TJ = 25°C
VR = 34V,
–––
49
–––
TJ = 125°C
IF = 220A
Qrr
Reverse Recovery Charge
–––
100
–––
nC TJ = 25°C
di/dt = 100A/µs
g
–––
110
–––
TJ = 125°C
IRRM
Reverse Recovery Current
–––
3.7
–––
A
TJ = 25°C
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
ID = 220A
RG = 2.7
VGS = 4.5V
g
VDD = 26V
ID = 170A, VDS =0V, VGS = 4.5V
TJ = 25°C, IS = 200A, VGS = 0V
g
integral reverse
p-n junction diode.
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 5mA
d
VGS = 10V, ID = 200A
g
VDS = VGS, ID = 250µA
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
MOSFET symbol
showing the
VDS =20V
Conditions
VGS = 4.5V g
VGS = 0V
VDS = 40V
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 0V to 32V
i, See Fig. 11
VGS = 0V, VDS = 0V to 32V
h
VGS = 4.5V, ID = 180A
g
Conditions
VDS = 10V, ID = 220A
ID = 170A
VGS = 20V
VGS = -20V


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