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IRLR8729PBF Scheda tecnica(PDF) 1 Page - International Rectifier

Il numero della parte IRLR8729PBF
Spiegazioni elettronici  Ultra-Low Gate Impedance
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Produttore elettronici  IRF [International Rectifier]
Homepage  http://www.irf.com
Logo IRF - International Rectifier

IRLR8729PBF Scheda tecnica(HTML) 1 Page - International Rectifier

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www.irf.com
1
11/23/09
IRLR8729PbF
IRLU8729PbF
HEXFET® Power MOSFET
Notes
 through … are on page 11
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l Lead-Free
l RoHS compliant
Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
™
PD @TC = 25°C
Maximum Power Dissipation
g
W
PD @TC = 100°C Maximum Power Dissipation g
Linear Derating Factor
W/°C
TJ
Operating Junction and
°C
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
2.73
RθJA
Junction-to-Ambient (PCB Mount)
–––
50
°C/W
RθJA
Junction-to-Ambient
–––
110
0.37
27
300 (1.6mm from case)
-55 to + 175
55
Max.
58
f
41
f
260
± 20
30
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
D-Pak
IRLR8729PbF
I-Pak
IRLU8729PbF
G
S
D
G
D
S
GD
S
Gate
Drain
Source
VDSS RDS(on) max
Qg
30V
8.9m
10nC
PD - 97352B


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