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1PS70SB16_15 Scheda tecnica(PDF) 1 Page - NXP Semiconductors |
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1PS70SB16_15 Scheda tecnica(HTML) 1 Page - NXP Semiconductors |
1 / 9 page 1PS70SB16 Dual Schottky barrier diode 17 December 2012 Product data sheet Scan or click this QR code to view the latest information for this product 1. General description Dual Planar Schottky barrier diode in common anode configuration with an integrated guard ring for stress protection, encapsulated in a very small SOT323 (SC-70) Surface- Mounted Device (SMD) plastic package. 2. Features and benefits • Low forward voltage • Low capacitance • AEC-Q101 qualified 3. Applications • Ultra high-speed switching • Line termination • Voltage clamping • Reverse polarity protection 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per diode IF forward current - - 200 mA VR reverse voltage - - 30 V Per diode VF forward voltage IF = 10 mA; Tamb = 25 °C - - 400 mV |
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