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1PS70SB15_15 Scheda tecnica(PDF) 3 Page - NXP Semiconductors |
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1PS70SB15_15 Scheda tecnica(HTML) 3 Page - NXP Semiconductors |
3 / 9 page NXP Semiconductors 1PS70SB15 Dual Schottky barrier diode 1PS70SB15 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 17 December 2012 3 / 9 Symbol Parameter Conditions Min Max Unit Tstg storage temperature -65 150 °C 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Per device Rth(j-a) thermal resistance from junction to ambient in free air [1] - - 625 K/W [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Per diode IF = 0.1 mA; Tamb = 25 °C - - 240 mV IF = 1 mA; Tamb = 25 °C - - 320 mV IF = 10 mA; Tamb = 25 °C - - 400 mV IF = 30 mA; Tamb = 25 °C - - 500 mV VF forward voltage IF = 100 mA; Tamb = 25 °C - - 800 mV IR reverse current VR = 25 V; pulsed; tp = 300 µs; δ = 0.02 ; Tamb = 25 °C - - 2 µA Cd diode capacitance VR = 1 V; f = 1 MHz; Tamb = 25 °C - - 10 pF |
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