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1N4001 Scheda tecnica(PDF) 2 Page - ON Semiconductor |
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1N4001 Scheda tecnica(HTML) 2 Page - ON Semiconductor |
2 / 7 page 1N4001, 1N4002, 1N4003, 1N4004, 1N4005, 1N4006, 1N4007 http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 Unit †Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 200 400 600 800 1000 V †Non−Repetitive Peak Reverse Voltage (halfwave, single phase, 60 Hz) VRSM 60 120 240 480 720 1000 1200 V †RMS Reverse Voltage VR(RMS) 35 70 140 280 420 560 700 V †Average Rectified Forward Current (single phase, resistive load, 60 Hz, TA = 75°C) IO 1.0 A †Non−Repetitive Peak Surge Current (surge applied at rated load conditions) IFSM 30 (for 1 cycle) A Operating and Storage Junction Temperature Range TJ Tstg −65 to +175 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. †Indicates JEDEC Registered Data THERMAL CHARACTERISTICS Rating Symbol Max Unit Maximum Thermal Resistance, Junction−to−Ambient RqJA Note 1 °C/W ELECTRICAL CHARACTERISTICS† Rating Symbol Typ Max Unit Maximum Instantaneous Forward Voltage Drop, (iF = 1.0 Amp, TJ = 25°C) vF 0.93 1.1 V Maximum Full−Cycle Average Forward Voltage Drop, (IO = 1.0 Amp, TL = 75°C, 1 inch leads) VF(AV) − 0.8 V Maximum Reverse Current (rated DC voltage) (TJ = 25°C) (TJ = 100°C) IR 0.05 1.0 10 50 mA Maximum Full−Cycle Average Reverse Current, (IO = 1.0 Amp, TL = 75°C, 1 inch leads) IR(AV) − 30 mA †Indicates JEDEC Registered Data |
Codice articolo simile - 1N4001 |
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Descrizione simile - 1N4001 |
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