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SMB1N-780D-02 Scheda tecnica(PDF) 1 Page - Roithner LaserTechnik GmbH

Il numero della parte SMB1N-780D-02
Spiegazioni elettronici  infrared high power led
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Homepage  http://www.roithner-laser.com
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SMB1N-780D-02 Scheda tecnica(HTML) 1 Page - Roithner LaserTechnik GmbH

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SMB1N-780D-02
v 1.0 17.03.2014
Description
SMB1N-780D-02 is a surface mount AlGaAs High Power LED with a typical peak wavelength of 780 nm
and radiation of 500 mW. It comes in SMD package (PA9T) with silver plated soldering pads (lead free
solderable), copper heat sink, and molded with silicone resin.
Maximum Ratings (T
CASE=25°C)
Parameter
Symbol
Values
Min.
Max.
Unit
Power Dissipation
PD
2100
mW
Forward Current
IF
800
mA
Pulse Forward Current *
1
IFP
2000
mA
Reverse Voltage
VF
5
V
Thermal Resistance
RTHJA
10
K/W
Junction Temperature
TJ
120
°C
Operating Temperature
TCASE
- 40
+ 100
°C
Storage Temperature
TSTG
- 40
+ 100
°C
Lead Solder Temperature *
2
TSLD
+ 250
°C
*
1 duty=1%, pulse width = 10 µs
*
2 must be completed within 5 seconds
Electro-Optical Characteristics (T
CASE=25°C)
*
1 measured by S3584-08
*
2 measured by CIE127-2007 Condition B
Parameter
Symbol Conditions
Values
Min.
Typ.
Max.
Unit
Peak Wavelength
λP
IF=800mA
770
780
790
nm
Half Width
∆λ
IF=800mA
28
nm
Forward Voltage
VF
IF=800mA
2.1
(2.6)
V
VFP
IFP=2A
2.9
Radiated Power *
1
PO
IF=800mA
500
mW
IFP=2A
1200
Radiant Intensity *
2
IE
IF=800mA
1200
mW/sr
IFP=2A
2900
Viewing Angle
φ
IF=100mA
18
deg.
Rise Time
tR
IF=800mA
110
ns
Fall Time
tF
IF=800mA
110
ns


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