BCY78-VII_15 datasheet(1/2 Pages) CENTRAL

Il numero della parte	BCY78-VII

Spiegazioni elettronici	SILICON PNP TRANSISTORS

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Produttore elettronici	CENTRAL [Central Semiconductor Corp]

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BCY78, VII, VIII, IX, X

BCY79, VII, VIII, IX, X

SILICON

PNP TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR BCY78 and BCY79

series types are silicon PNP epitaxial planar transistors,

mounted in a hermetically sealed metal case, designed

for low noise amplifier and switching applications.

MARKING: FULL PART NUMBER

MAXIMUM RATINGS: (TA=25°C unless otherwise noted)

SYMBOL

BCY78

BCY79

UNITS

Collector-Base Voltage

VCBO

32

45

V

Collector-Emitter Voltage

VCEO

32

45

V

Emitter-Base Voltage

VEBO

5.0

V

Continuous Collector Current

IC

100

mA

Peak Collector Current

ICM

200

mA

Peak Base Current

IBM

200

mA

Power Dissipation

PD

340

mW

Power Dissipation (TC=25°C)

PD

1.0

W

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +200

°C

Thermal Resistance

JA

450

°C/W

Thermal Resistance

JC

150

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICBO

VCB=Rated VCBO

15

nA

ICBO

VCB=Rated VCBO, TA=150°C

10

μA

IEBO

VEB=5.0V

20

nA

BVCBO

IC=10μA (BCY78)

32

V

BVCBO

IC=10μA (BCY79)

45

V

BVCEO

IC=2.0mA (BCY78)

32

V

BVCEO

IC=2.0mA (BCY79)

45

V

BVEBO

IE=1.0μA

5.0

V

VCE(SAT)

IC=10mA, IB=250μA

0.25

V

VCE(SAT)

IC=100mA, IB=2.5mA

0.80

V

VBE(SAT)

IC=10mA, IB=250μA

0.60

0.85

V

VBE(SAT)

IC=100mA, IB=2.5mA

0.70

1.20

V

VBE(ON)

VCE=5.0V, IC=2.0mA

0.60

0.75

V

BCY78-VII

BCY78-VIII

BCY78-IX

BCY78-X

BCY79-VII

BCY79-VIII

BCY79-IX

BCY79-X

MIN TYP MAX

MIN MAX

hFE

VCE=5.0V, IC=10μA

-

140

-

30

-

40

-

100

-

hFE

VCE=5.0V, IC=2.0mA

120

-

220

180

310

250

460

380

630

hFE

VCE=1.0V, IC=10mA

80

-

120

400

160

630

240

1000

hFE

VCE=1.0V, IC=100mA

40

-

45

-

60

-

60

-

TO-18 CASE

R4 (4-June 2013)

www.centr a lsemi.com

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