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SMB1N-515V Scheda tecnica(PDF) 1 Page - Roithner LaserTechnik GmbH

Il numero della parte SMB1N-515V
Spiegazioni elettronici  green high power led
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Produttore elettronici  ROITHNER [Roithner LaserTechnik GmbH]
Homepage  http://www.roithner-laser.com
Logo ROITHNER - Roithner LaserTechnik GmbH

SMB1N-515V Scheda tecnica(HTML) 1 Page - Roithner LaserTechnik GmbH

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SMB1N-515V
v 1.0 05.09.2014
Description
SMB1N-515V is a surface mount InGaN High Power LED with a typical peak wavelength of 515 nm and
radiation of 230 mW. It comes in SMD package (PA9T) with silver plated soldering pads (lead free
solderable), copper heat sink, and molded with silicone resin.
Maximum Ratings (T
CASE=25°C)
Parameter
Symbol
Values
Min.
Max.
Unit
Power Dissipation
PD
1300
mW
Forward Current
IF
350
mA
Pulse Forward Current *
1
IFP
1000
mA
Reverse Voltage
VF
5
V
Thermal Resistance
RTHJA
6
K/W
Junction Temperature
TJ
125
°C
Operating Temperature
TCASE
- 40
+ 110
°C
Storage Temperature
TSTG
- 40
+ 125
°C
Lead Solder Temperature *
2
TSLD
+ 250
°C
*
1 duty=1%, pulse width = 10 µs
*
2 must be completed within 5 seconds
Electro-Optical Characteristics (T
CASE=25°C)
*
1 measured by S3584-08
*
2 measured by Tektronix J-6512
Parameter
Symbol Conditions
Values
Min.
Typ.
Max.
Unit
Peak Wavelength
λP
IF=350mA
515
nm
Half Width
∆λ
IF=350mA
35
nm
Dominant Wavelength
λD
IF=350mA
525
nm
Forward Voltage
VF
IF=350mA
3.1
3.6
V
VFP
IFP=1000mA
4.1
Radiated Power *
1
PO
IF=350mA
230
mW
IFP=1000mA
460
Brightness
IV
IF=350mA
37
cd
IFP=1000mA
80
Radiant Intensity *
2
IE
IF=350mA
80
mW/sr
IFP=1000mA
170
Viewing Angle
φ
IF=100mA
126
deg.
Rise Time
tR
IF=350mA
250
ns
Fall Time
tF
IF=350mA
250
ns


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