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FZT955 Scheda tecnica(PDF) 4 Page - Diodes Incorporated |
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FZT955 Scheda tecnica(HTML) 4 Page - Diodes Incorporated |
4 / 7 page FZT955 Datasheet Number: DS33190 Rev. 5 - 2 4 of 7 www.diodes.com March 2015 © Diodes Incorporated FZT955 A Product Line of Diodes Incorporated Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ. Max Unit Test Condition Collector-Base Breakdown Voltage BVCBO -180 -210 - V IC = -100µA Collector-Emitter Breakdown Voltage (Note 9) BVCER -180 -210 - V IC = -1µA, RB ≤ 1kΩ Collector-Emitter Breakdown Voltage (Note 9) BVCEO -140 -170 - V IC = -1mA Emitter-Base Breakdown Voltage BVEBO -7 -8 - V IE = -100µA Collector Cut-Off Current ICBO - - <1 - -50 -1 nA µ A VCB = -150V VCB = -150V, TA = +100°C Collector Cut-Off Current ICER R ≤ 1kΩ - - <1 - -50 -1 nA µA VCB = -150V VCB = -150V, TA = +100°C Emitter Cut-Off Current IEBO - - -10 nA VEB = -6V DC Current Transfer Static Ratio (Note 9) hFE 100 200 - - IC = -10mA, VCE = -5V 100 200 300 IC = -1A, VCE = -5V 75 140 - IC = -3A, VCE = -5V - 10 - IC = -10A, VCE = -5V Collector-Emitter Saturation Voltage (Note 9) VCE(sat) - -30 -60 mV IC = -100mA, IB = -5mA - -70 -120 IC = -500mA, IB = -50mA - -110 -150 IC = -1A, IB = -100mA - -275 -370 IC = -3A, IB = -300mA Base-Emitter Saturation Voltage (Note 9) VBE(sat) - -970 -1110 mV IC = -3A, IB = -300mA Base-Emitter Turn-On Voltage (Note 9) VBE(on) - -830 -950 mV IC = -3A, VCE = -5V Transitional Frequency (Note 9) fT - 110 - MHz IC = -100mA, VCE = -10V, f = 50MHz Output Capacitance Cobo - 40 - pF VCB = -20V, f = 1MHz Switching Time tON - 68 - ns VCC = -50V, IC = -1A, IB1 = -IB2 = -100mA tOFF - 1,030 - Note: 9. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%. |
Codice articolo simile - FZT955_15 |
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Descrizione simile - FZT955_15 |
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