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FZT953 Scheda tecnica(PDF) 4 Page - Diodes Incorporated |
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FZT953 Scheda tecnica(HTML) 4 Page - Diodes Incorporated |
4 / 7 page FZT953 Datasheet Number: DS35942 Rev. 4 - 2 4 of 7 www.diodes.com March 2015 © Diodes Incorporated FZT953 A Product Line of Diodes Incorporated Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ. Max Unit Test Condition Collector-Base Breakdown Voltage BVCBO -140 -170 - V IC = -100µA Collector-Emitter Breakdown Voltage (Note 10) BVCER -140 -170 - V IC = -1µA, RB ≤ 1k Collector-Emitter Breakdown Voltage (Note 10) BVCEO -100 -120 - V IC = -1mA Emitter-Base Breakdown Voltage BVEBO -7 -8 - V IE = -100µA Collector Cutoff Current ICBO - - <1 - -50 -1 nA µ A VCB = -100V VCB = -100V, TA = +100°C Collector Cutoff Current ICER R ≤1k - - <1 - -50 -1 nA µA VCB = -100V VCB = -100V, TA = +100°C Emitter Cutoff Current IEBO - <1 -10 nA VEB = -6V DC current transfer Static ratio (Note 10) hFE 100 200 - - IC = -10mA, VCE = -1V 100 200 300 IC = -1A, VCE = -1V 50 90 - IC = -3A, VCE = -1V 30 50 - IC = -4A, VCE = -1V - 15 - IC = -10A, VCE = -1V Collector-Emitter Saturation Voltage (Note 10) VCE(sat) - -20 -50 mV IC = -100mA, IB = -10mA - -90 -115 IC = -1A, IB = -100mA - -160 -220 IC = -2A, IB = -200mA - -300 -420 IC = -4A, IB = -400mA Base-Emitter Saturation Voltage (Note 10) VBE(sat) - -1,010 -1,170 mV IC = -4A, IB = -400mA Base-Emitter Turn-on Voltage (Note 10) VBE(on) - -925 -1,160 mV IC = -4A, VCE = -1V Transitional Frequency fT - 125 - MHz IC = -100mA, VCE = -10V, f = 50MHz Output capacitance Cobo - 65 - pF VCB = -10V, f = 1MHz Switching Time tON - 110 - ns VCC = -10V, IC = -2A, IB1 = -IB2 = -200mA tOFF - 460 - Note: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. |
Codice articolo simile - FZT953_15 |
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Descrizione simile - FZT953_15 |
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