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FZT853 Scheda tecnica(PDF) 2 Page - Diodes Incorporated

Il numero della parte FZT853
Spiegazioni elettronici  100V NPN MEDIUM POWER TRANSISTOR IN SOT223
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Produttore elettronici  DIODES [Diodes Incorporated]
Homepage  http://www.diodes.com
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FZT853 Scheda tecnica(HTML) 2 Page - Diodes Incorporated

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FZT853
Document Number DS33175 Rev. 5 - 2
2 of 7
www.diodes.com
May 2015
© Diodes Incorporated
FZT853
A Product Line of
Diodes Incorporated
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
200
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
7
V
Continuous Collector Current
IC
6
A
Peak Pulse Current
ICM
10
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
Linear Derating Factor
(Note 5)
PD
3.0
24
W
mW/°C
(Note 6)
1.6
12.8
Thermal Resistance, Junction to Ambient
(Note 5)
RJA
42
°C/W
(Note 6)
RJA
78
Thermal Resistance Junction to Lead
(Note 7)
RJL
8.8
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
ESD Ratings (Note 8)
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic Discharge - Human Body Model
ESD HBM
8,000
V
3B
Electrostatic Discharge - Machine Model
ESD MM
400
V
C
Notes:
5. For a device mounted with the collector lead on 52mm x 52mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in steady-state.
6. Same as Note 6, except the device is mounted on 25mm x 25mm 1oz copper.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.


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