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FZT958 Scheda tecnica(PDF) 4 Page - Diodes Incorporated |
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FZT958 Scheda tecnica(HTML) 4 Page - Diodes Incorporated |
4 / 7 page FZT958 Datasheet Number: DS36166 Rev. 5 - 2 4 of 7 www.diodes.com May 2015 © Diodes Incorporated FZT958 A Product Line of Diodes Incorporated Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ. Max Unit Test Condition Collector-Base Breakdown Voltage BVCBO -400 -600 - V IC = -100µA Collector-Emitter Breakdown Voltage (Note 9) BVCER -400 -600 - V IC = -1µA, RB ≤ 1kΩ Collector-Emitter Breakdown Voltage (Note 9) BVCEO -400 -550 - V IC = -10mA Emitter-Base Breakdown Voltage BVEBO -7 -8 - V IE = -100µA Collector Cut-Off Current ICBO - - <1 - -50 -1 nA µ A VCB = -300V VCB = -300V, TA = +100°C Collector Cut-Off Current ICER R ≤ 1kΩ - - <1 - -50 -1 nA µA VCB = -300V VCB = -300V, TA = +100°C Emitter Cut-Off Current IEBO - <1 -10 nA VEB = -6V DC Current Transfer Static Ratio (Note 9) hFE 100 200 - - IC = -10mA, VCE = -10V 100 200 300 IC = -0.5A, VCE = -10V 10 20 - IC = -1A, VCE = -10V Collector-Emitter Saturation Voltage (Note 9) VCE(sat) - -100 -150 mV IC = -10mA, IB = -1mA - -150 -200 IC = -100mA, IB = -10mA - -340 -400 IC = -500mA, IB = -100mA Base-Emitter Saturation Voltage (Note 9) VBE(sat) - -830 -950 mV IC = -0.5A, IB = -100mA Base-Emitter Turn-On Voltage (Note 9) VBE(on) - -725 -840 mV IC = -0.5A, VCE = -10V Transitional Frequency (Note 9) fT - 85 - MHz IC = -100mA, VCE = -10V, f = 50MHz Output Capacitance Cobo - 19 - pF VCB = -20V, f = 1MHz Switching Time tON - 104 - ns VCC = -100V, IC = -500mA, IB1 = -IB2 = -50mA tOFF - 2,400 - Note: 9. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%. |
Codice articolo simile - FZT958_15 |
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Descrizione simile - FZT958_15 |
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