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DZT5551 Scheda tecnica(PDF) 2 Page - Diodes Incorporated |
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DZT5551 Scheda tecnica(HTML) 2 Page - Diodes Incorporated |
2 / 7 page DZT5551 Document number: DS31219 Rev. 3 - 2 2 of 7 www.diodes.com November 2012 © Diodes Incorporated DZT5551 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 6 V Continuous Collector Current IC 600 mA Peak Collector Current ICM 1 A Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) PD 2 W Thermal Resistance, Junction to Ambient (Note 5) RθJA 62.5 °C/W Thermal Resistance, Junction to Leads (Note 6) RθJL 34.05 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 5. Device mounted on 50mm X 50mm X 1.6mm FR-4 PCB with high coverage of single sided 1 oz. copper, in still air condition 6. Thermal resistance from junction to solder-point (at the end of the collector lead). |
Codice articolo simile - DZT5551_15 |
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Descrizione simile - DZT5551_15 |
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