NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: F00049E

DOC

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

SFF250M

SFF250Z

(Unless Otherwise Specified)

Symbol

Min

Typ

Max

Units

Drain to Source Breakdown Voltage

(VGS= 0 V, ID= 250

μA

200

––

––

V

Drain to Source On State Resistance

(VGS= 10 V, ID= 18 A

––

0.06

0.085

Ω

Gate Threshold Voltage

(VDS= VGS, ID= 250

μA

2

3

5

V

Forward Transconductance

(VDS≥ IN(on) X RDS(on) Max, ID= 18 A

10

17

––

mho

Zero Gate Voltage Drain Current

(VDS= 200 V, VGS= 0 V)

(VDS= 200 V, VGS= 0 V, TA= 125ºC)

––

––

––

––

25

250

μA

Gate to Source Leakage Forward

Gate to Source Leakage Reverse

At rated VGS

––

––

––

––

+100

-100

nA

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

VGS=10 V

VDS= 100 V

ID= 30 A

––

––

––

70

18

35

120

25

65

nC

Turn on Delay Time

Rise Time

Turn on Delay Time

Fall Time

VDD= 100 V

ID= 15 A

RG= 6.2Ω

tr

tf

––

––

––

––

29

35

75

35

30

180

100

120

nsec

Diode Forward Voltage

(IS= 30 A, VGS= 0 V, TJ= 25ºC)

––

––

1.1

1.5

V

Diode Reverse Recovery Time

Reverse Recovery Charge

IF= 10 A

di/dt= 100 A/

μsec

––

––

150

2.0

630

8

nsec

μC

Input Capacitance

Input Capacitance

Reverse Transfer Capacitance

VGS= 0 Volts

VDS= 25 Volts

f= 1 MHz

––

––

––

4200

650

120

––

––

––

pF

For thermal derating curves and other characteristics please contact SSDI Marketing Department.

Available Part Numbers:

SFF250M; SFF250MDB; SFF250MUB;

SFF250Z; SFF250ZDB; SFF250ZUB;

PIN ASSIGNMENT (Standard)

Package

Drain

Source

Gate

TO-254 (M)

Pin 1

Pin 2

Pin 3

TO-254Z (Z)

Pin 1

Pin 2

Pin 3