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KTD1824E Scheda tecnica(PDF) 1 Page - KEC(Korea Electronics) |
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KTD1824E Scheda tecnica(HTML) 1 Page - KEC(Korea Electronics) |
1 / 3 page 2001. 10. 23 1/3 SEMICONDUCTOR TECHNICAL DATA KTD1824E EPITAXIAL PLANAR NPN TRANSISTOR Revision No : 0 FOR LOW-FREQUENCY AMPLIFICATION. FEATURES High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV. ESM type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. MAXIMUM RATINGS (Ta=25 ) DIM MILLIMETERS A B D E ESM 1.60 0.10 0.85 0.10 0.70 0.10 0.27+0.10/-0.05 1.60 0.10 1.00 0.10 0.50 0.13 0.05 C G H J 1 3 2 E B D J 1. EMITTER 2. BASE 3. COLLECTOR +_ +_ +_ +_ +_ +_ ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=20V, IE=0 - - 100 nA ICEO VCE=20V, IB=0 - - 1 A Collector-Base Breakdown Voltage V(BR)CBO IC=10 A, IE=0 50 V Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA, IB=0 40 V Emitter-Base Breakdown Voltage V(BR)EBO IE=10 A, IC=0 15 V DC Current Gain hFE (Note) VCE=10V, IC=2mA 400 1000 2000 Collector-Emitter Saturation Voltage VCE(sat) IC=10mA, IB=1mA - 0.05 0.2 V Transition Frequency fT VCB=10V, IE=-2mA, f=200MHz - 120 - MHz CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 15 V Collector Current DC IC 50 mA Pulse ICP 100 Collector Power Dissipation PC 100 mW Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 h Rank Type Name Marking L FE Note : hFE Classification A:400~800, B:600~1200, C:1000~2000 |
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