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SS10PH10 Scheda tecnica(PDF) 1 Page - Vishay Siliconix |
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SS10PH10 Scheda tecnica(HTML) 1 Page - Vishay Siliconix |
1 / 6 page SS10PH9, SS10PH10 www.vishay.com Vishay General Semiconductor Revision: 06-Nov-13 1 Document Number: 89000 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 High Current Density Surface Mount High Voltage Schottky Rectifiers FEATURES • Power pack • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Guardring for overvoltage protection • High barrier technology, TJ = 175 °C maximum • Low leakage current • Meets MSL level 1, per J-STD-020 • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters, or polarity protection application. MECHANICAL DATA Case: TO-277A (SMPC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant, and automotive grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix meets JESD 201 class 2 whisker test PRIMARY CHARACTERISTICS IF(AV) 10 A VRRM 90 V, 100 V IFSM 200 A EAS 20 mJ VF at IF = 10 A 0.661 V IR 0.3 μA TJ max. 175 °C Package TO-277A (SMPC) Diode variations Single die TO-277A (SMPC) Anode 1 Anode 2 Cathode K K 2 1 eSMP® Series Available MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL SS10PH9 SS10PH10 UNIT Device marking code 10H9 10H10 Maximum repetitive peak reverse voltage VRRM 90 100 V Maximum average forward rectified current (fig. 1) IF(AV) 10 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 200 A Non-repetitive avalanche energy at IAS = 2.0 A, TJ = 25 °C EAS 20 mJ Operating junction and storage temperature range TJ, TSTG -55 to +175 °C |
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