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TAT9988 Scheda tecnica(PDF) 2 Page - TriQuint Semiconductor

Il numero della parte TAT9988
Spiegazioni elettronici  CATV GaN Power Doubler MMIC
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Produttore elettronici  TRIQUINT [TriQuint Semiconductor]
Homepage  http://www.triquint.com
Logo TRIQUINT - TriQuint Semiconductor

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TAT9988
CATV GaN Power Doubler MMIC
Preliminary Datasheet: Rev G 10-07-14
- 2 of 11 -
Disclaimer: Subject to change without notice
© 2014 TriQuint
www.triquint.com
Absolute Maximum Ratings
Parameter
Rating
Storage Temperature
-40 to +100°C
RF Input Power, CW, 75
Ω, T=25°C
70 dBmV
Supply Voltage (VDD)
+30 V
Supply Current (IDD)
600 mA
Operation of this device outside the parameter ranges
given above may cause permanent damage.
Recommended Operating Conditions
Parameter
Min
Typ
Max Units
Supply Voltage (VDD)
24
V
Case Temperature
-30
+100
°C
Junction Temperature, Tj
155
°C
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended
operating conditions.
Typical Performance
− Push-Pull Configuration (1)
Test conditions unless otherwise noted: VDD=+24 V,
75 Ω System, Base Temp=+35°C.
Parameter
Conditions
Min
Typ
Max
Units
Operating Frequency
50
1000
MHz
Gain
Tested at 1000 MHz
23
23.5
24.25
dB
Gain Slope
45 to 1003 MHz
0.25
1.5
dB
Gain Flatness
Relative to Slope Line
±0.5
±0.8
dB
Input Return Loss (2)
18
dB
Output Return Loss (2)
19
dB
CSO
79 channels NTSC
75 channels QAM, -6dB offset,
60 dBmV virtual output, 18dB Tilt
-69
-65
dBc
CTB
-75
-69
dBc
XMOD
-65
dBc
CCN
55
59
dBm
Output IP3
Pout= 19 dBm/tone, at 500 MHz
Δf = 6 MHz
53
dB
Noise Figure
3.5
dB
Supply Current, IDD
410
445
470
mA
Thermal Resistance, θjc
Junction to case
5
°C/W
Notes:
1. Includes balun, board, and connector losses.
2. Return losses dependent on balun and transformer selection.
EVB Information
– TAT8888 Hybrid Evaluation Board Assembly
SOT-115 Hybrid Module
0.020 ± 0.005
Finished Board
Thickness


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