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NE3509M04 Scheda tecnica(PDF) 4 Page - Renesas Technology Corp |
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NE3509M04 Scheda tecnica(HTML) 4 Page - Renesas Technology Corp |
4 / 12 page Data Sheet PG10608EJ02V0DS 2 NE3509M04 RECOMMENDED OPERATING CONDITIONS (TA = +25 °C) Parameter Symbol MIN. TYP. MAX. Unit Drain to Source Voltage VDS − 2 3 V Drain Current ID − 10 20 mA Input Power Pin − − 0 dBm ELECTRICAL CHARACTERISTICS (TA = +25 °C, unless otherwise specified) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Gate to Source Leak Current IGSO VGS = −3 V − 0.5 10 μA Saturated Drain Current IDSS VDS = 2 V, VGS = 0 V 30 45 60 mA Gate to Source Cutoff Voltage VGS (off) VDS = 2 V, ID = 50 μA −0.25 −0.5 −0.75 V Transconductance gm VDS = 2 V, ID = 10 mA 80 − − mS Noise Figure NF VDS = 2 V, ID = 10 mA, f = 2 GHz − 0.4 0.7 dB Associated Gain Ga 16 17.5 − dB Gain 1 dB Compression PO (1 dB) VDS = 2 V, ID = 10 mA (Non-RF), − 11 − dBm Output Power f = 2 GHz |
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