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NE3512S02 Scheda tecnica(PDF) 3 Page - Renesas Technology Corp |
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NE3512S02 Scheda tecnica(HTML) 3 Page - Renesas Technology Corp |
3 / 11 page DATA SHEET Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3512S02 C TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET Document No. PG10592EJ01V0DS (1st edition) Date Published February 2006 CP(N) Printed in Japan NEC Compound Semiconductor Devices, Ltd. 2005, 2006 FEATURES • Super low noise figure and high associated gain NF = 0.35 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz • Micro-X plastic (S02) package APPLICATIONS • C to Ku-band DBS LNB • Other C to Ku-band communication systems ORDERING INFORMATION Part Number Order Number Package Quantity Marking Supplying Form NE3512S02-T1C NE3512S02-T1C-A 2 kpcs/reel C NE3512S02-T1D NE3512S02-T1D-A S02 (Pb-Free) 10 kpcs/reel • 8 mm wide embossed taping • Pin 4 (Gate) faces the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: NE3512S02 ABSOLUTE MAXIMUM RATINGS (TA = +25 °C) Parameter Symbol Ratings Unit Drain to Source Voltage VDS 4 V Gate to Source Voltage VGS −3 V Drain Current ID IDSS mA Gate Current IG 100 µA Total Power Dissipation Ptot Note 165 mW Channel Temperature Tch +125 °C Storage Temperature Tstg −65 to +125 °C Note Mounted on 1.08 cm 2 × 1.0 mm (t) glass epoxy PCB |
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