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NE3511S02-T1D Scheda tecnica(PDF) 3 Page - Renesas Technology Corp |
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NE3511S02-T1D Scheda tecnica(HTML) 3 Page - Renesas Technology Corp |
3 / 11 page DATA SHEET Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3511S02 X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET Document No. PG10642EJ01V0DS (1st edition) Date Published October 2006 NS CP(N) Printed in Japan 2006 FEATURES • Super low noise figure and high associated gain NF = 0.30 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz • Micro-X plastic (S02) package APPLICATIONS • X to Ku-band DBS LNB • Other X to Ku-band communication systems ORDERING INFORMATION Part Number Order Number Package Quantity Marking Supplying Form NE3511S02-T1C NE3511S02-T1C-A 2 kpcs/reel B NE3511S02-T1D NE3511S02-T1D-A S02 (Pb-Free) 10 kpcs/reel • 8 mm wide embossed taping • Pin 4 (Gate) faces the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: NE3511S02 ABSOLUTE MAXIMUM RATINGS (TA = +25 °C) Parameter Symbol Ratings Unit Drain to Source Voltage VDS 4 V Gate to Source Voltage VGS −3 V Drain Current ID IDSS mA Gate Current IG 100 μA Total Power Dissipation Ptot Note 165 mW Channel Temperature Tch +125 °C Storage Temperature Tstg −65 to +125 °C Note Mounted on 1.08 cm 2 × 1.0 mm (t) glass epoxy PCB |
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