IRF3706L datasheet(1/11 Pages) IRF

Il numero della parte	IRF3706L

Spiegazioni elettronici	Power MOSFET(Vdss=20V, Rds(on)max=8.5mohm, Id=77A)

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Produttore elettronici	IRF [International Rectifier]

Homepage	http://www.irf.com

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Symbol

Parameter

Max.

Units

VDS

Drain-Source Voltage

20

V

VGS

Gate-to-Source Voltage

± 12

V

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V

77

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V

54

A

IDM

Pulsed Drain Current

280

PD @TC = 25°C

Maximum Power Dissipation

88

W

PD @TC = 100°C

Maximum Power Dissipation

44

W

Linear Derating Factor

0.59

W/°C

TJ , TSTG

Junction and Storage Temperature Range

-55 to + 175

°C

www.irf.com

1

7/5/00

IRF3706

IRF3706S

SMPS MOSFET

HEXFET® Power MOSFET

VDSS

RDS(on) max

ID

20V

8.5m

Ω

77A

Notes

through are on page 11

Absolute Maximum Ratings

D2Pak

IRF3706S

TO-220AB

IRF3706

TO-262

IRF3706L

Thermal Resistance

Parameter

Typ.

Max.

Units

RθJC

Junction-to-Case

–––

1.7

RθCS

Case-to-Sink, Flat, Greased Surface

0.50

–––

°C/W

RθJA

Junction-to-Ambient

–––

62

RθJA

Junction-to-Ambient (PCB mount)

–––

40

IRF3706L

Applications

Benefits

l Ultra-Low Gate Impedance

l Very Low RDS(on) at 4.5V VGS

l Fully Characterized Avalanche Voltage

and Current

l High Frequency Isolated DC-DC

Converters with Synchronous Rectification

for Telecom and Industrial Use

l High Frequency Buck Converters for

Computer Processor Power

PD - 93936A

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International Rectifier	IRF3706LPBF	365Kb / 12P	High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use

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IRF3706L Scheda tecnica(PDF) 1 Page - International Rectifier

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