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IRF1407 Scheda tecnica(PDF) 1 Page - International Rectifier

Il numero della parte IRF1407
Spiegazioni elettronici  Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A??
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Produttore elettronici  IRF [International Rectifier]
Homepage  http://www.irf.com
Logo IRF - International Rectifier

IRF1407 Scheda tecnica(HTML) 1 Page - International Rectifier

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Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
130
V
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
92
V
A
IDM
Pulsed Drain Current
Q
520
PD @TC = 25°C
Power Dissipation
330
W
Linear Derating Factor
2.2
W/°C
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy
R
390
mJ
IAR
Avalanche Current
Q
See Fig.12a, 12b, 15, 16
A
EAR
Repetitive Avalanche Energy
W
mJ
dv/dt
Peak Diode Recovery dv/dt
S
4.6
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Mounting Torque, 6-32 or M3 screw
10 lbf•in (1.1N•m)
HEXFET® Power MOSFET
Specifically designed for Automotive applications, this Stripe Planar
design of HEXFET® Power MOSFETs utilizes the lastest processing
techniques to achieve extremely low
on-resistance per silicon area.
Additional features of this HEXFET power MOSFET are a 175°C junction
operating temperature, fast switching speed and improved repetitive
avalanche rating. These benefits combine to make this design an extremely
efficient and reliable device for use in Automotive applications and a wide
variety of other applications.
S
D
G
Absolute Maximum Ratings
VDSS = 75V
RDS(on) = 0.0078Ω
ID = 130A
V
Description
10/11/01
www.irf.com
1
q
Advanced Process Technology
q
Ultra Low On-Resistance
q
Dynamic dv/dt Rating
q
175°C Operating Temperature
q
Fast Switching
q
Repetitive Avalanche Allowed up to Tjmax
Benefits
Typical Applications
q
Integrated Starter Alternator
q
42 Volts Automotive Electrical Systems
AUTOMOTIVE MOSFET
TO-220AB
PD - 93907
IRF1407
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
0.45
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
°C/W
RθJA
Junction-to-Ambient
–––
62
Thermal Resistance


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