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IRF1407 Scheda tecnica(PDF) 1 Page - International Rectifier |
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IRF1407 Scheda tecnica(HTML) 1 Page - International Rectifier |
1 / 9 page Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 130 V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 92 V A IDM Pulsed Drain Current Q 520 PD @TC = 25°C Power Dissipation 330 W Linear Derating Factor 2.2 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy R 390 mJ IAR Avalanche Current Q See Fig.12a, 12b, 15, 16 A EAR Repetitive Avalanche Energy W mJ dv/dt Peak Diode Recovery dv/dt S 4.6 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Mounting Torque, 6-32 or M3 screw 10 lbf•in (1.1N•m) HEXFET® Power MOSFET Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. S D G Absolute Maximum Ratings VDSS = 75V RDS(on) = 0.0078Ω ID = 130A V Description 10/11/01 www.irf.com 1 q Advanced Process Technology q Ultra Low On-Resistance q Dynamic dv/dt Rating q 175°C Operating Temperature q Fast Switching q Repetitive Avalanche Allowed up to Tjmax Benefits Typical Applications q Integrated Starter Alternator q 42 Volts Automotive Electrical Systems AUTOMOTIVE MOSFET TO-220AB PD - 93907 IRF1407 Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.45 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient ––– 62 Thermal Resistance |
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