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IRF1010NS Scheda tecnica(PDF) 1 Page - International Rectifier

Il numero della parte IRF1010NS
Spiegazioni elettronici  Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A??
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Produttore elettronici  IRF [International Rectifier]
Homepage  http://www.irf.com
Logo IRF - International Rectifier

IRF1010NS Scheda tecnica(HTML) 1 Page - International Rectifier

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IRF1010NS
IRF1010NL
HEXFET® Power MOSFET
02/14/02
VDSS = 55V
RDS(on) = 11mΩ
ID = 85A
‡
S
D
G
Advanced
HEXFET®
Power
MOSFETs
from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device
for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
The through-hole version (IRF1010NL) is available for low-
profile applications.
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ˆ
85
‡
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
ˆ
60
A
IDM
Pulsed Drain Current
ˆ
290
PD @TC = 25°C
Power Dissipation
180
W
Linear Derating Factor
1.2
W/°C
VGS
Gate-to-Source Voltage
± 20
V
IAR
Avalanche Current

43
A
EAR
Repetitive Avalanche Energy

18
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒˆ
3.6
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew
10 lbf•in (1.1N•m)
2
D
P ak
TO-26 2
IRF1010NL
IRF1010NS
www.irf.com
1
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
0.85
RθJA
Junction-to-Ambient ( PCB Mounted,steady-state)**
–––
40
°C/W
Thermal Resistance
PD - 94171


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