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PZT359 Scheda tecnica(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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PZT359 Scheda tecnica(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 2 page Any changing of specification will not be informed individual PZT359 PNP Silicon Planar http://www.SeCoSGmbH.com Elektronische Bauelemente Features Excellent gain characteristic specified up to 10Amps. 5 Amps continuous current, up to 10 Amp peak current. Very low saturation voltage Mechanical Data Case: SOT-223 Plastic Package Weight: approx. 0.021g Marking Code: 359 xxxx (xxxx = date code) RoHS Compliant Product 01-Jun-2002 Rev. A Page 1 of 2 Electrical Characteristics Parameter Symbol Min Typ. Max Uni Test Conditions Collector-Base Breakdown Voltage BVCBO -140 - - V IC=-100 μA, IE=0 Collector-Emitter Breakdown Voltage (w/ Real Device Limit) BVCER -140 - - V IC=-1 μA, RB<=1KΩ Collector-Emitter Breakdown Voltage *BVCEO -100 - - V IC=-10mA, IB=0 Emitter-Base Breakdown Voltage BVEBO -6 - - V IE=-100 μA, IC=0 Collector-Base Cutoff Current ICBO -- -50 nA VCB=-100V, IE=0 Collector-Base Cutoff Current (w/ Real Device Limit) ICER -- -50 nA VCB=-100V, R<=1K Ω Emitter-Base Cutoff Current IEBO -- -10 nA VEB=-6V, IC=0 Collector Saturation Voltage 1 *VCE(sat)1 - -20 -50 mV IC=-100mA, IB=-10mA Collector Saturation Voltage 2 *VCE(sat)2 - -90 -115 mV IC=-1A, IB=-100mA Collector Saturation Voltage 3 *VCE(sat)3 - -160 -220 mV IC=-2A, IB=-200mA Collector Saturation Voltage 4 *VCE(sat)4 - -300 -420 mV IC=-4A, IB=-400mA Base Saturation Voltage *VBE(sat) - -1.01 -1.17 V IC=-4A, IB=-400mA Base-Emitter Voltage *VBE(on) - -0.925 -1.16 V VCE=-1V, IC=-4A DC Current Gain 1 *hFE1 100 200 - VCE=-1V, IC=-10mA DC Current Gain 2 *hFE2 100 200 300 VCE=-1V, IC=-1A DC Current Gain 3 *hFE350 90 - VCE=-1V, IC=-3A DC Current Gain 4 *hFE430 50 - VCE=-1V, IC=- 4A DC Current Gain 5 *hFE515 - VCE=-1V, IC=-10A Gain-Bandwidth Product fT - - 125 - MHz VCE=-10V, IC=-100mA, f=50MHz (TJ =25 OC, unless otherwise noted) High Current Transistor B C E C SOT-223 12 3 1. BASE Maxim Junction Temperature um Ratings and Thermal Characteristics Parameter Symbol Value Unit Collector-Emitter Voltage VCEO -100 V Collector-Base Voltage VCBO -140 V Emitter-Base Voltage VEBO -6 V Collector Current (DC) IC -5 Total Power Dissipation PD W 3 Storage Temperature Tstg -55 to +150 *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum. A A Collector Current (Pulse) IC -10 (TA = 25 OC, unless otherwise noted) 2. COLLECTOR 3. EMITTER Tj +150 OC O C 1.6 2 |
Codice articolo simile - PZT359_15 |
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Descrizione simile - PZT359_15 |
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