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PZT359 Scheda tecnica(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Il numero della parte PZT359
Spiegazioni elettronici  High Current Transistor
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Produttore elettronici  SECOS [SeCoS Halbleitertechnologie GmbH]
Homepage  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

PZT359 Scheda tecnica(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Any changing of specification will not be informed individual
PZT359
PNP Silicon Planar
http://www.SeCoSGmbH.com
Elektronische Bauelemente
Features
Excellent gain characteristic specified up to 10Amps.
5 Amps continuous current, up to 10 Amp peak current.
Very low saturation voltage
Mechanical Data
Case: SOT-223 Plastic Package
Weight: approx. 0.021g
Marking Code: 359
xxxx
(xxxx = date code)
RoHS Compliant Product
01-Jun-2002 Rev. A
Page 1 of 2
Electrical Characteristics
Parameter
Symbol
Min
Typ.
Max
Uni
Test Conditions
Collector-Base Breakdown Voltage
BVCBO
-140
-
-
V
IC=-100
μA, IE=0
Collector-Emitter Breakdown Voltage
(w/ Real Device Limit)
BVCER
-140
-
-
V
IC=-1
μA, RB<=1KΩ
Collector-Emitter Breakdown Voltage
*BVCEO
-100
-
-
V
IC=-10mA, IB=0
Emitter-Base Breakdown Voltage
BVEBO
-6
-
-
V
IE=-100
μA, IC=0
Collector-Base Cutoff Current
ICBO
--
-50
nA
VCB=-100V, IE=0
Collector-Base Cutoff Current
(w/ Real Device Limit)
ICER
--
-50
nA
VCB=-100V, R<=1K
Ω
Emitter-Base Cutoff Current
IEBO
--
-10
nA
VEB=-6V, IC=0
Collector Saturation Voltage 1
*VCE(sat)1
-
-20
-50
mV
IC=-100mA, IB=-10mA
Collector Saturation Voltage 2
*VCE(sat)2
-
-90
-115
mV
IC=-1A, IB=-100mA
Collector Saturation Voltage 3
*VCE(sat)3
-
-160
-220
mV
IC=-2A, IB=-200mA
Collector Saturation Voltage 4
*VCE(sat)4
-
-300
-420
mV
IC=-4A, IB=-400mA
Base Saturation Voltage
*VBE(sat)
-
-1.01
-1.17
V
IC=-4A, IB=-400mA
Base-Emitter Voltage
*VBE(on)
-
-0.925
-1.16
V
VCE=-1V, IC=-4A
DC Current Gain 1
*hFE1
100
200
-
VCE=-1V, IC=-10mA
DC Current Gain 2
*hFE2
100
200
300
VCE=-1V, IC=-1A
DC Current Gain 3
*hFE350
90
-
VCE=-1V, IC=-3A
DC Current Gain 4
*hFE430
50
-
VCE=-1V, IC=-
4A
DC Current Gain 5
*hFE515
-
VCE=-1V, IC=-10A
Gain-Bandwidth Product
fT
-
-
125
-
MHz VCE=-10V, IC=-100mA, f=50MHz
(TJ =25
OC, unless otherwise noted)
High Current Transistor
B
C
E
C
SOT-223
12
3
1.
BASE
Maxim
Junction Temperature
um Ratings and Thermal Characteristics
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
-100
V
Collector-Base Voltage
VCBO
-140
V
Emitter-Base Voltage
VEBO
-6
V
Collector Current (DC)
IC
-5
Total Power Dissipation
PD
W
3
Storage Temperature
Tstg
-55 to +150
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum.
A
A
Collector Current (Pulse)
IC
-10
(TA = 25
OC, unless otherwise noted)
2.
COLLECTOR
3.
EMITTER
Tj
+150
OC
O C
1.6


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