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ES11A Scheda tecnica(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Il numero della parte ES11A
Spiegazioni elettronici  1.0 Amp High Efficiency Recovery Rectifiers
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Produttore elettronici  SECOS [SeCoS Halbleitertechnologie GmbH]
Homepage  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

ES11A Scheda tecnica(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
ES11A~ES13A
Voltage 50 V ~ 200 V
1.0 Amp High Efficiency Recovery Rectifiers
19-May-2014 Rev. D
Page 1 of 2
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Glass passivated chip
MECHANICAL DATA
Case: Molded plastic SMA/DO-214AC
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-750 method 2026
Polarity: Color band denotes cathode
Mounting position: Any
Weight: 0.064 gram
PACKAGE INFORMATION
Package
MPQ
Leader Size
SMA
5K
13’ inch
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, de-rate current by 20%.)
Part Number
Parameter
Symbol
ES11A
ES12A
ES13A
Unit
Maximum Repetitive Peak Reverse Voltage
VRRM
50
100
200
V
Maximum RMS Voltage
VRMS
35
70
140
V
Maximum DC Blocking Voltage
VDC
50
100
200
V
Maximum Average Forward Rectified
Current.375”(9.5mm) Lead Length at TA=55°C
IF
1
A
Peak Forward Surge Current, 8.3ms single half
sine-wave superimposed on rated load
IFSM
30
A
Maximum Instantaneous Forward Voltage @ 1.0A
VF
0.92
V
TA=25°C
5
Maximum DC Reverse Current
at Rated DC Blocking Voltage
TA=100°C
IR
100
μA
Maximum Reverse Recovery Time
1
TRR
15
nS
Typical Thermal Resistance
3
RθJA
75
Typical Junction Capacitance
2
CJ
15
pF
Operating & Storage Temperature
TJ,TSTG
-55~150
°C
Notes:
1. Reverse Recovery Time test condition:IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
SMA
A
B
E
G
D
F
C
H
Millimeter
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
1.24
1.65
E
-
0.203
B
3.99
4.60
F
4.80
5.28
C
2.40
2.90
G
0.76
1.52
D
1.90
2.44
H
0.15
0.305


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