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BCP2098 Scheda tecnica(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Il numero della parte BCP2098
Spiegazioni elettronici  Epitaxial Planar Transistor
Download  2 Pages
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Produttore elettronici  SECOS [SeCoS Halbleitertechnologie GmbH]
Homepage  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

BCP2098 Scheda tecnica(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

  BCP2098_15 Datasheet HTML 1Page - SeCoS Halbleitertechnologie GmbH BCP2098_15 Datasheet HTML 2Page - SeCoS Halbleitertechnologie GmbH  
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Elektronische Bauelemente
BCP2098
NPN Silicon
Epitaxial Planar Transistor
19-May-2011 Rev. B
Page 1 of 2
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The BCP2098 is an epitaxial planar type NPN silicon transistor.
FEATURES
Excellent DC Current Gain Characteristics
Low Saturation Voltage, Typically VCE(SAT)=0.25V
At IC / IB=4A / 0.1A
CLASSIFICATION OF hFE (1)
Product-Rank
BCP2098-Q
BCP2098-R
Range
120~270
180~390
PACKAGE INFORMATION
Package
MPQ
Leader Size
SOT-89
1K
13’ inch
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
20
V
Emitter-Base Voltage
VEBO
6
V
Collector Current -Continuous
IC
5
A
Collector Current (Pulse)
1
ICP
10
A
Total Power Dissipation
PD
0.5(2.0)
2
W
Junction & Storage temperature
TJ, TSTG
-55~150
°C
Note:
1. Single pulse, PW=10ms.
2. When mounted on a 40*40*0.7mm ceramic board.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameters
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Collector-base breakdown voltage
V(BR)CBO
50
-
-
V
IC=50μA, IE=0
Collector-emitter
breakdown
V(BR)CEO
20
-
-
V
IC=1mA, IB=0
Emitter-base breakdown voltage
V(BR)EBO
6
-
-
V
IE=50μA, IC=0
Collector cut-off current
ICBO
-
-
0.5
μA
VCB=40V, IE=0
Emitter cut-off current
IEBO
-
-
0.5
μA
VEB=5V, IC=0
DC current gain
hFE
120
-
390
VCE=2V, IC=0.5A
Collector-emitter saturation voltage
1
VCE(sat)
-
0.25
1
V
IC=4A, IB=0.1A
Transition frequency
fT
-
150
-
MHz
VCE=6V, IC=50mA,
f=100MHz
Output Capacitance
COB
-
30
-
pF
VCB=20V, IE=0, f=1MHz
Note:
1. Measured under pulse condition. Pulse width≦300
s, Duty Cycle≦2%.
Millimeter
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
4.40
4.60
G
0.40
0.58
B
3.94
4.25
H
1.50 TYP
C
1.40
1.60
J
3.00 TYP
D
2.30
2.60
K
0.32
0.52
E
1.50
1.70
L
0.35
0.44
F
0.89
1.20
SOT-89
A
E
C
D
B
K
H
F
G
L
J
1
2
3
4


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