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YSESD9D3 Scheda tecnica(PDF) 2 Page - Yea Shin Technology Co., Ltd |
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YSESD9D3 Scheda tecnica(HTML) 2 Page - Yea Shin Technology Co., Ltd |
2 / 3 page http://www.yeashin.com 2 REV.02 20121119 YSESD9D3.3CT5G DEVICE CHARACTERISTICS Electrical Parameter Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM IT Test Current VBR Breakdown Voltage @ IT Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.VF = 0.9V at IF = 10mA VRWM (V) IR(uA) @ VRWM VBR (V)@ IT (Note 1) IT VC (V) @ IPP=5 A* VC (V) @ Max IPP* IPP (A)* PPK (W)* C (pF) Device Max Max Min mA Typ Max Max Max Typ 3.3 1 5.0 1.0 8.4 14.1 11.2 158 25 *Surge current waveform per Figure 1. 1. VBR is measured with a pulse test current IT at an ambient temperature of 25℃. Fig1. Pulse Waveform Fig2.Power Derating Curve YSESD9D3.3CT5G |
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