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FDG6301N Scheda tecnica(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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FDG6301N Scheda tecnica(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
1 / 4 page SMD Type www.kexin.com.cn 1 MOSFET Dual N-Channel MOSFET FDG6301N (KDG6301N) ■ Features ● VDS (V) = 25V ● ID = 220m A (VGS = 4.5V) ● RDS(ON) < 4Ω (VGS = 4.5V) ● RDS(ON) < 5Ω (VGS = 2.7V) ● Gate-Source Zener for ESD ruggedness (>6kV Human Body Model). 1 S 2 G1 3 D2 1 S1 2 G1 3 D2 4 S2 5 G2 6 D1 ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Unit VDS 25 VGS ± 8 Continuous 220 Pulsed 650 PD 300 mW RthJA 415 ℃ /W TJ 150 Tstg -55 to 150 Power Dissipation Human Body Model(100 pF / 1500 W) ESD mA KV 6 V Electrostatic Discharge Rating MIL-STD-883D Parameter Continuous Drain Current ID Drain-Source Voltage Gate-Source Voltage Junction Temperature Storage Temperature Range ℃ Thermal Resistance.Junction- to-Ambient 1 or 4 6 or 3 5 or 2 4 or 1 2 or 5 3 or 6 |
Codice articolo simile - FDG6301N |
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Descrizione simile - FDG6301N |
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