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IRF330 Scheda tecnica(PDF) 3 Page - Intersil Corporation

Il numero della parte IRF330
Spiegazioni elettronici  5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET
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Produttore elettronici  INTERSIL [Intersil Corporation]
Homepage  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

IRF330 Scheda tecnica(HTML) 3 Page - Intersil Corporation

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3
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
ISD
Modified MOSFET Symbol
Showing the Integral
Reverse P-N Junction Diode
-
-
5.5
A
Pulse Source to Drain Current (Note 3)
ISDM
-
-
22
A
Source to Drain Diode Voltage (Note 2)
VSD
TJ = 25
oC, I
SD = 5.5A, VGS = 0V (Figure 13)
-
-
1.6
V
Reverse Recovery Time
trr
TJ = 25
oC, I
SD = 5.5A, dISD/dt = 100A/µs
140
400
660
ns
Reverse Recovery Charge
QRR
TJ = 25
oC, I
SD = 5.5A, dISD/dt = 100A/µs
0.93
2.4
4.3
µC
NOTES:
2. Pulse test: pulse width
≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25
oC, L = 17.75mH, R
G = 25Ω, peak IAS = 6.5A. See Figures 15, 16.
Typical Performance Curves Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
G
D
S
0
50
100
150
0
TC, CASE TEMPERATURE (
oC)
0.2
0.4
0.6
0.8
1.0
1.2
2
0
050
100
TC, CASE TEMPERATURE (
oC)
10
150
8
75
125
4
6
0.5
0.05
10-2
10-5
10-4
10-3
1.0
10
t1, RECTANGULAR WAVE PULSE DURATION (s)
10-1
PDM
t1
t2
SINGLE PULSE
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
NOTES:
2
1.0
0.2
0.1
0.02
0.01
0.01
0.05
0.5
0.2
0.1
0.02
IRF330


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