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IRF250 Scheda tecnica(PDF) 5 Page - Intersil Corporation

Il numero della parte IRF250
Spiegazioni elettronici  30A, 200V, 0.085 Ohm, N-Channel Power MOSFET
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Produttore elettronici  INTERSIL [Intersil Corporation]
Homepage  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

IRF250 Scheda tecnica(HTML) 5 Page - Intersil Corporation

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5
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Typical Performance Curves Unless Otherwise Specified (Continued)
140
1.25
1.05
0.85
TJ, JUNCTION TEMPERATURE (
oC)
1.15
0.95
0.75
0
100
ID = 250µA
-40
40
-60
-20
20
60
80
120
120
12
10
2
5
102
VDS, DRAIN TO SOURCE VOLTAGE (V)
7500
6000
4500
3000
1500
0
5
CRSS
CISS
COSS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
ID, DRAIN CURRENT (A)
10
20
30
40
050
25
20
15
0
10
5
TJ = 25
oC
TJ = 150
oC
80
µs PULSE TEST
VDS ≥ 50V
VSD, SOURCE TO DRAIN VOLTAGE (V)
102
1
0
0.5
1.0
1.5
2.5
10
2
2
5
5
TJ = 150
oC
TJ = 25
oC
103
2
5
2.0
Qg(TOT), TOTAL GATE CHARGE (nC)
25
50
75
100
0
125
20
8
16
12
0
VDS = 40V
4
ID = 30A
VDS = 100V
VDS = 160V
IRF250


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