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IRF150 Scheda tecnica(PDF) 2 Page - Intersil Corporation

Il numero della parte IRF150
Spiegazioni elettronici  40A, 100V, 0.055 Ohm, N-Channel Power MOSFET
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Produttore elettronici  INTERSIL [Intersil Corporation]
Homepage  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

IRF150 Scheda tecnica(HTML) 2 Page - Intersil Corporation

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2
Absolute Maximum Ratings
TC = 25
oC, Unless Otherwise Specified
IRF150
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
100
V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
100
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
40
A
TC = 100
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
25
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
160
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
±20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
150
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.2
W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS
150
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25
oC to 125oC.
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA (Figure 10)
100
-
-
V
Gate to Threshold Voltage
VGS(TH) VGS = VDS, ID = 250µA
2.0
-
4.0
V
Zero Gate Voltage Drain Current
IDSS
VDS = Rated BVDSS, VGS = 0V
-
-
25
µA
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125
oC
-
-
250
µA
On-State Drain Current (Note 2)
ID(ON)
VDS > ID(ON) x rDS(ON)MAX, VGS = 10V
40
-
-
A
Gate to Source Leakage Current
IGSS
VGS = ±20V
-
-
±100
nA
Drain to Source On Resistance (Note 2)
rDS(ON)
VGS = 10V, ID = 20A (Figures 8, 9)
-
0.045
0.055
Forward Transconductance (Note 2)
gfs
VDS > ID(ON) x rDS(ON)MAX, ID = 20A (Figure 12)
9.0
11
-
S
Turn-On Delay Time
td(ON)
VDD = 24V, ID ≈ 20A, RG = 4.7Ω, RL = 1.2Ω
(Figures 17, 18) MOSFET Switching Times are
Essentially Independent of Operating Temperature
-
-
35
ns
Rise Time
tr
-
-
100
ns
Turn-Off Delay Time
td(OFF)
-
-
125
ns
Fall Time
tf
-
-
100
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Qg(TOT) VGS = 10V, ID = 50A, VDS = 0.8 x Rated BVDSS,
Ig(REF) = -1.5mA (Figures 14, 19, 20) Gate Charge
is Essentially Independent of Operating
Temperature
-
63
120
nC
Gate to Source Charge
Qgs
-27
-
nC
Gate to Drain “Miller” Charge
Qgd
-36
-
nC
Input Capacitance
CISS
VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11)
-
2000
-
pF
Output Capacitance
COSS
-
1000
-
pF
Reverse Transfer Capacitance
CRSS
-
350
-
pF
Internal Drain Inductance
LD
Measured between the
Contact Screw on the
Flange that is Closer to
Source and Gate Pins and
the Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
-
5.0
-
nH
Internal Source Inductance
LS
Measured from the
Source Lead, 6mm
(0.25in) from the Flange
and the Source Bonding
Pad
-
12.5
-
nH
Thermal Impedance Junction to Case
RθJC
-
-
0.8
oC/W
Thermal Impedance Junction to Ambient
RθJA
Free Air Operation
-
-
30
oC/W
LS
LD
G
D
S
IRF150


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