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MTB110P10L3 Scheda tecnica(PDF) 5 Page - Cystech Electonics Corp. |
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MTB110P10L3 Scheda tecnica(HTML) 5 Page - Cystech Electonics Corp. |
5 / 9 page CYStech Electronics Corp. Spec. No. : C968L3 Issued Date : 2014.12.23 Revised Date : Page No. : 5/9 MTB110P10L3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 10 100 1000 10000 0.1 1 10 100 -VDS, Drain-Source Voltage(V) C oss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=-250μA ID=-1mA Maximum Safe Operating Area 0.01 0.1 1 10 100 0.1 1 10 100 1000 -VDS, Drain-Source Voltage(V) DC 100ms 100μs 10μs RDS(ON) Limit TA=25°C, Tj=150°, VGS=-10V Single Pulse 10ms 1ms Gate Charge Characteristics 0 2 4 6 8 10 0 4 8 1216 2024 2832 Qg, Total Gate Charge(nC) VDS=-80V ID=-3.8A Maximum Drain Current vs Junction Temperature 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) TA=25°C, VGS=10V, RθJA=40°C/W Single Pulse Power Rating, Junction to Ambient (Note on page 2) 0 10 20 30 40 50 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width(s) TJ(MAX)=150°C TA=25°C θJA=40°C/W |
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