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MTB110P10E3 Scheda tecnica(PDF) 4 Page - Cystech Electonics Corp. |
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MTB110P10E3 Scheda tecnica(HTML) 4 Page - Cystech Electonics Corp. |
4 / 8 page CYStech Electronics Corp. Spec. No. : C968E3 Issued Date : 2014.08.04 Revised Date : Page No. : 4/8 MTB110P10E3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 0 10 20 30 40 50 0 2 4 6 8 10 -VDS, Drain-Source Voltage(V) -10V -9V -8V -7V -6V -5V VGS=-3V VGS=-2.5V VGS=-4V VGS=-3.5V Brekdown Voltage vs Junction Temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) ID=-250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 10 100 1000 0.01 0.1 1 10 100 -ID, Drain Current(A) VGS=-3V VGS=-4.5V VGS=-10V VGS=-2V VGS=-2.5V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1 1.2 0 4 8 12 16 20 -IDR, Reverse Drain Current(A) Tj=25°C Tj=150°C Static Drain-Source On-State Resistance vs Gate-Source Voltage 0 50 100 150 200 250 300 350 400 450 500 0 2 4 6 8 10 -VGS, Gate-Source Voltage(V) ID=-11A Drain-Source On-State Resistance vs Junction Tempearture 0 0.4 0.8 1.2 1.6 2 2.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) VGS=-10V, ID=-11A RDS(ON)@Tj=25°C : 80mΩ typ. |
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