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MTB070P15J3-0-T3-G Scheda tecnica(PDF) 5 Page - Cystech Electonics Corp.

Il numero della parte MTB070P15J3-0-T3-G
Spiegazioni elettronici  P-Channel Enhancement Mode Power MOSFET
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Produttore elettronici  CYSTEKEC [Cystech Electonics Corp.]
Homepage  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTB070P15J3-0-T3-G Scheda tecnica(HTML) 5 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C985J3
Issued Date : 2015.01.21
Revised Date :
Page No. : 5/9
MTB070P15J3
CYStek Product Specification
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
10
100
1000
10000
010
20
30
Threshold Voltage vs Junction Tempearture
0.2
0.4
0.6
0.8
1
1.2
1.4
-75 -50 -25
0
25 50
75 100 125 150 175 200
Tj, Junction Temperature(°C)
ID=-250μA
ID=-1mA
Ciss
-VDS, Drain-Source Voltage(V)
C oss
Crss
f=1MHz
Maximum Safe Operating Area
0.1
1
10
100
0.1
1
10
100
1000
-VDS, Drain-Source Voltage(V)
RDS(ON)
Limited
DC
10ms
100ms
1ms
100
μs
1s
TC=25°C, Tj=175°C,
VGS=-10V, RθJC=1.6°C/W,
single pulse
Gate Charge Characteristics
0
2
4
6
8
10
0
20
40
60
80
100
120
140
160
Qg, Total Gate Charge(nC)
ID=-18A
VDS=-30V
VDS=-75V
VDS=-120V
Maximum Drain Current vs Case Temperature
0
5
10
15
20
25
25
50
75
100
125
150
175
200
TC, Case Temperature(°C)
VGS=-10V, Tj(max)=175°C,
RθJC=1.6°C/W, single pulse
Forward Transfer Admittance vs Drain Current
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
100
-ID, Drain Current(A)
VDS=-15V
Pulsed
Ta=25°C


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