CYStech Electronics Corp.

Spec. No. : C912Q8

Issued Date : 2014.07.24

Revised Date :

Page No. : 2/9

MTB09N06Q8

CYStek Product Specification

Parameter

Symbol

Limits

Unit

Drain-Source Voltage

60

V

Gate-Source Voltage

±20

(Note 1)

18.0

A

(Note 1)

12.7

(Note 2)

12.0

(Note 2)

9.6

Pulsed Drain Current

72

Avalanche Current

40

80

mJ

Repetitive Avalanche Energy @ L=0.05mH

(Note 3)

0.6

Total Power Dissipation

(Note 1)

6

W

(Note 1)

3

(Note 2)

2.5

(Note 2)

1.6

Operating Junction and Storage Temperature Range

Tj, Tstg

-55~+175

C

Thermal Data

Parameter

Symbol

Value

Unit

Thermal Resistance, Junction-to-case, max

25

C/W

Thermal Resistance, Junction-to-ambient, max

(Note 2)

50

Note : 1

in setting the upper dissipation limit for cases where additional heatsinking is used.

2

temperature of 150°C. The value in any given application depends on the user’s specific board design, and the

maximum temperature of 175°C may be used if the PCB allows it.

3

C, unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

60

-

-

V

-

0.1

-

V/

C

Reference to 25

1.0

-

2.5

V

*1

-

30

-

S

-

-

±100

nA

-

-

1

μA

-

-

25

C

-

7.3

11

mΩ

-

8.4

14

mΩ