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ADF4360-7 Scheda tecnica(PDF) 6 Page - Analog Devices

Il numero della parte ADF4360-7
Spiegazioni elettronici  Integrated Synthesizer and VCO
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Produttore elettronici  AD [Analog Devices]
Homepage  http://www.analog.com
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ADF4360-7 Scheda tecnica(HTML) 6 Page - Analog Devices

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ADF4360-7
Data Sheet
Rev. D | Page 6 of 28
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 3.
Parameter
Rating
AVDD to GND1
−0.3 V to +3.9 V
AVDD to DVDD
−0.3 V to +0.3 V
VVCO to GND
−0.3 V to +3.9 V
VVCO to AVDD
−0.3 V to +0.3 V
Digital I/O Voltage to GND
−0.3 V to VDD + 0.3 V
Analog I/O Voltage to GND
−0.3 V to VDD + 0.3 V
REFIN to GND
−0.3 V to VDD + 0.3 V
Operating Temperature Range
Maximum Junction Temperature
150°C
CSP θJA Thermal Impedance
Paddle Soldered
50°C/W
Paddle Not Soldered
88°C/W
Peak Soldering Reflow Temperature
260°C
1
GND = AGND = DGND = 0 V.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute maxi-
mum rating conditions for extended periods may affect device
reliability.
This device is a high performance RF integrated circuit with an
ESD rating of <1 kV, and it is ESD sensitive. Proper precautions
should be taken for handling and assembly.
TRANSISTOR COUNT
12543 (CMOS) and 700 (Bipolar)
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate
on the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy elec-
trostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or
loss of functionality.


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