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BC337 Scheda tecnica(PDF) 6 Page - NXP Semiconductors |
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BC337 Scheda tecnica(HTML) 6 Page - NXP Semiconductors |
6 / 19 page BC817_BC817W_BC337_6 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 06 — 17 November 2009 6 of 19 NXP Semiconductors BC817; BC817W; BC337 45 V, 500 mA NPN general-purpose transistors VCE = 1 V (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C VCE = 1 V (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 1. Selection -16: DC current gain as a function of collector current; typical values Fig 2. Selection -25: DC current gain as a function of collector current; typical values VCE = 1 V (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 3. Selection -40: DC current gain as a function of collector current; typical values 006aaa131 200 100 300 400 hFE 0 IC (mA) 10−1 103 102 110 (1) (2) (3) 006aaa132 400 200 600 hFE 0 IC (mA) 10−1 103 102 110 (1) (2) (3) 006aaa133 400 200 600 800 hFE 0 IC (mA) 10−1 103 102 110 (1) (2) (3) |
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