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FDD20AN06_F085 Scheda tecnica(PDF) 2 Page - Fairchild Semiconductor |
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FDD20AN06_F085 Scheda tecnica(HTML) 2 Page - Fairchild Semiconductor |
2 / 11 page Package Marking and Ordering Information Electrical Characteristics T C = 25°C unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics (V GS = 10V) Drain-Source Diode Characteristics Notes: 1: Starting TJ = 25°C, L = 80µH, IAS = 36A. Device Marking Device Package Reel Size Tape Width Quantity 16mm 2500 units Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 60 - - V IDSS Zero Gate Voltage Drain Current VDS = 50V - - 1 µA VGS = 0V TC = 150 oC - - 250 IGSS Gate to Source Leakage Current VGS = ±20V - - ±100 nA VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 2 - 4 V rDS(ON) Drain to Source On Resistance ID = 45A, VGS = 10V - 0.017 0.020 Ω ID = 45A, VGS = 10V, TJ = 175 oC - 0.039 0.047 CISS Input Capacitance VDS = 25V, VGS = 0V, f = 1MHz - 950 - pF COSS Output Capacitance - 185 - pF CRSS Reverse Transfer Capacitance - 60 - pF Qg(TOT) Total Gate Charge at 10V VGS = 0V to 10V VDD = 30V ID = 45A Ig = 1.0mA 15 19 nC Qg(TH) Threshold Gate Charge VGS = 0V to 2V - 2 2.6 nC Qgs Gate to Source Gate Charge - 6 - nC Qgs2 Gate Charge Threshold to Plateau - 4 - nC Qgd Gate to Drain “Miller” Charge - 4.5 - nC tON Turn-On Time VDD = 30V, ID = 45A VGS = 10V, RGS = 20Ω - - 164 ns td(ON) Turn-On Delay Time - 11 - ns tr Rise Time - 98 - ns td(OFF) Turn-Off Delay Time - 23 - ns tf Fall Time - 33 - ns tOFF Turn-Off Time - - 84 ns VSD Source to Drain Diode Voltage ISD = 45A - - 1.25 V ISD = 22A - - 1.0 V trr Reverse Recovery Time ISD = 45A, dISD/dt = 100A/µs - - 32 ns QRR Reverse Recovered Charge ISD = 45A, dISD/dt = 100A/µs - - 25 nC ©2010 Fairchild Semiconductor Corporation FDD20AN06A0_F085 Rev. B1 FDD20AN06A0 FDD20AN06A0_F085 TO-252AA 330mm |
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