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SI1040X Scheda tecnica(PDF) 2 Page - Vishay Siliconix |
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SI1040X Scheda tecnica(HTML) 2 Page - Vishay Siliconix |
2 / 8 page www.vishay.com 2 Document Number: 71809 S10-2544-Rev. D, 08-Nov-10 Vishay Siliconix Si1040X Notes: a. Minimum R1 value should be at least 10 x R2 to ensure Q1 turn- on. The Si1040X is ideally suited for high-side load switching in portable applications. The integrated N-Channel level-shift device saves space by reducing external components. The slew rate is set externally so that rise-times can be tailored to different load types. Notes: a. Surface mounted on 1" x 1" FR4 board. Notes: a. Surface mounted on FR4 board. b. VIN = 8 V, VON/OFF = 8 V, TA = 25 °C. c. Pulse test; pulse width 300 µs, duty cycle 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. COMPONENTS R1 Pull-Up Resistor Typical 10 k to 1 ma R2 Optional Slew-Rate Control Typical 0 to 100 k a C1 Optional Slew-Rate Control Typical 1000 pF ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Input Voltage VIN 8 V ON/OFF Voltage VON/OFF 8 Load Current Continuousa, b IL ± 0.43 A Pulsedb, c ± 1.0 Continuous Intrinsic Diode Conductiona IS - 0.15 Maximum Power Dissipationa PD 0.174 W Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500 ) ESD 2 kV THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient (Continuous Current)a RthJA 600 720 °C/W Maximum Junction-to-Foot (Q2) RthJC 450 540 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit OFF Characteristics Reverse Leakage Current IFL VIN = 8 V, VON/OFF = 0 V 1 µA Diode Forward Voltage VSD IS = - 0.15 A 0.85 1.2 V ON Characteristics Input Voltage Range VIN 1.8 8 V On-Resistance (P-Channel) at 1 A RDS(on) VON/OFF = 1.5 V, VIN = 4.5 V, ID = 0.43 A 0.500 0.625 VON/OFF = 1.5 V, VIN = 2.5 V, ID = 0.36 A 0.710 0.890 VON/OFF = 1.5 V, VIN = 1.8 V, ID = 0.3 A 1.0 1.25 On-State (P-Channel) Drain Current ID(on) VIN-OUT 0.2 V, VIN = 5 V, VON/OFF = 1.5 V 1 A VIN-OUT 0.3 V, VIN = 3 V, VON/OFF = 1.5 V 0.8 |
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