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SI1040X Scheda tecnica(PDF) 2 Page - Vishay Siliconix

Il numero della parte SI1040X
Spiegazioni elettronici  Load Switch with Level-Shift
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SI1040X Scheda tecnica(HTML) 2 Page - Vishay Siliconix

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Document Number: 71809
S10-2544-Rev. D, 08-Nov-10
Vishay Siliconix
Si1040X
Notes:
a. Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-
on.
The Si1040X is ideally suited for high-side load switching in
portable applications. The integrated N-Channel level-shift
device saves space by reducing external components. The
slew rate is set externally so that rise-times can be tailored to
different load types.
Notes:
a. Surface mounted on 1" x 1" FR4 board.
Notes:
a. Surface mounted on FR4 board.
b. VIN = 8 V, VON/OFF = 8 V, TA = 25 °C.
c. Pulse test; pulse width
 300 µs, duty cycle  2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
COMPONENTS
R1
Pull-Up Resistor
Typical 10 k
 to 1 ma
R2
Optional Slew-Rate Control
Typical 0 to 100 k
a
C1
Optional Slew-Rate Control
Typical 1000 pF
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Input Voltage
VIN
8
V
ON/OFF Voltage
VON/OFF
8
Load Current
Continuousa, b
IL
± 0.43
A
Pulsedb, c
± 1.0
Continuous Intrinsic Diode Conductiona
IS
- 0.15
Maximum Power Dissipationa
PD
0.174
W
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500
)
ESD
2
kV
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient (Continuous Current)a
RthJA
600
720
°C/W
Maximum Junction-to-Foot (Q2)
RthJC
450
540
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
OFF Characteristics
Reverse Leakage Current
IFL
VIN = 8 V, VON/OFF = 0 V
1
µA
Diode Forward Voltage
VSD
IS = - 0.15 A
0.85
1.2
V
ON Characteristics
Input Voltage Range
VIN
1.8
8
V
On-Resistance (P-Channel) at 1 A
RDS(on)
VON/OFF = 1.5 V, VIN = 4.5 V, ID = 0.43 A
0.500
0.625
VON/OFF = 1.5 V, VIN = 2.5 V, ID = 0.36 A
0.710
0.890
VON/OFF = 1.5 V, VIN = 1.8 V, ID = 0.3 A
1.0
1.25
On-State (P-Channel) Drain Current
ID(on)
VIN-OUT 0.2 V, VIN = 5 V, VON/OFF = 1.5 V
1
A
VIN-OUT 0.3 V, VIN = 3 V, VON/OFF = 1.5 V
0.8


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