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2SC4833_2015 Scheda tecnica(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SC4833_2015 Scheda tecnica(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 3 page Product Specification www.jmnic.com JMnic Silicon NPN Power Transistors 2SC4833 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 400 V VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.5A 1.0 V VBEsat Emitter-base saturation voltage IC=2.5A; IB=0.5A 1.5 V ICBO Collector cut-off current ICEO Collector cut-off current At rated volatge 0.1 mA IEBO Emitter cut-off current At rated volatge 0.1 mA hFE-1 DC current gain IC=2.5A ; VCE=2V 10 25 hFE-2 DC current gain IC=1mA ; VCE=2V 10 fT Transition frequency IC=0.5A ; VCE=10V 13 MHz ton Turn-on time 0.3 μs ts Storage time 1.3 μs tf Fall time IC=2.5A;IB1=0.5A IB2=1A ,RL=60Ω VBB2=4V 0.1 μs |
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