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2SC1079_2014 Scheda tecnica(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SC1079_2014 Scheda tecnica(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 3 page Product Specification www.jmnic.com 2 Silicon NPN Power Transistors 2SC1079 2SC1080 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2SC1079 120 V(BR)CEO Collector-emitter breakdown voltage 2SC1080 IC=0.1A ;IB=0 100 V V(BR)EBO Emitter-base breakdown voltage IE=10mA ;IC=0 5 V VCEsat Collector-emitter saturation voltage IC=10A; IB=1A 3.0 V VBE Base-emitter on voltage IC=10A ; VCE=5V 2.5 V ICBO Collector cut-off current VCB=50V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE-1 DC current gain IC=2A ; VCE=5V 40 140 hFE-2 DC current gain IC=7A ; VCE=5V 15 fT Transition frequency IC=2A ; VCE=5V 4 MHz hFE-1 Classifications R Y 40-80 70-140 |
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