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FZT795A Scheda tecnica(PDF) 1 Page - List of Unclassifed Manufacturers |
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FZT795A Scheda tecnica(HTML) 1 Page - List of Unclassifed Manufacturers |
1 / 2 page SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES * 140 Volt VCEO * Gain of 250 at IC=0.2 Amps and very low VCE(sat) APPLICATIONS * Battery powered circuits COMPLEMENTARY TYPE FZT694B PARTMARKING DETAIL FZT795A ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -140 V Collector-Emitter Voltage VCEO -140 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -1 A Continuous Collector Current IC -500 mA Power Dissipation at Tamb=25°C Ptot 2W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb= 25°C) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Breakdown Voltages V(BR)CBO -140 V IC=-100µA V(BR)CEO -140 V IC=-10mA* V(BR)EBO -5 V IE=-100µA Cut-Off Currents ICBO -0.1 µ A VCB=-100V IEBO -0.1 µ A VEB=-4V Collector-Emitter Saturation Voltage VCE(sat) -0.3 -0.3 -0.25 V V V IC=-100mA, IB=-1mA* IC=-200mA, IB=-5mA* IC=-500mA, IB=-50mA* Base-Emitter Saturation Voltage VBE(sat) -0.95 V IC=-500mA, IB=-50mA* Base-Emitter Turn-On Voltage VBE(on) -0.75 V IC=-500mA, VCE=-2V* Static Forward Current Transfer Ratio hFE 300 250 100 800 IC=-10mA, VCE=-2V* IC=-200mA, VCE=-2V* IC=-300mA, VCE=-2V* Transition Frequency fT 100 MHz IC=-50mA, VCE=-5V f=50MHz Input Capacitance Cibo 225 pF VEB=-0.5V, f=1MHz Output Capacitance Cobo 15 pF VCB=-10V, f=1MHz Switching Times ton toff 100 1900 ns ns IC=-100mA, IB1=-10mA IB2=-10mA, VCC=-50V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device FZT795A FZT795A C C E B 3 - 254 3 - 253 0.01 0.1 1 10 0.8 0.6 0 1.6 0.01 0.1 1 10 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0.2 1.6 1.4 1.2 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 VCE(sat) v IC I+ - Collector Current (Amps) VCE(sat) v IC I+ - Collector Current (Amps) I+ - Collector Current (Amps) I+ - Collector Current (Amps) hFE v IC VBE(sat) v IC I+ - Collector Current (Amps) VBE(on) v IC 750 500 250 Tamb=25°C -55°C +25°C +100°C +175°C 0 +100°C +25°C -55°C 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 -55°C +25°C +100°C +175°C 1.8 1.4 1.2 1.0 0.4 0.2 0.8 0.6 0 1.6 1.8 1.4 1.2 1.0 0.4 0.2 -55°C +25°C +100°C 0.001 TYPICAL CHARACTERISTICS IC/IB=10 IC/IB=40 IC/IB=20 0.001 IC/IB=40 VCE=2V VCE=2V IC/IB=10 1 0.1 Safe Operating Area VCE - Collector Emitter Voltage (V) 10 100 1s DC 100ms 10ms 100µs 1ms 1 0.01 1000 0.001 |
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