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TP2540N8-G Scheda tecnica(PDF) 1 Page - Supertex, Inc

Il numero della parte TP2540N8-G
Spiegazioni elettronici  P-Channel Enhancement Mode Vertical DMOS FETs
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Produttore elettronici  SUTEX [Supertex, Inc]
Homepage  http://www.supertex.com
Logo SUTEX - Supertex, Inc

TP2540N8-G Scheda tecnica(HTML) 1 Page - Supertex, Inc

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Supertex inc.
Supertex inc. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com
TP2535
Features
Low threshold (-2.4V max.)
High input impedance
Low input capacitance (125pF max.)
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Applications
Logic level interfaces - ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
General Description
This low threshold enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and with the high input
impedance and positive temperature coefficient inherent
in MOS devices. Characteristic of all MOS structures,
this device is free from thermal runaway and thermally-
induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching
speeds are desired.
P-Channel Enhancement Mode
Vertical DMOS FETs
Absolute Maximum Ratings
Pin Configuration
Product Marking
Ordering Information
Device
Package Option
BV
DSS/BVDGS
(V)
R
DS(ON)
(max)
(Ω)
V
GS(th)
(max)
(V)
I
D(ON)
(min)
(A)
TO-92
TP2535
TP2535N3-G
-350
25
-2.4
-0.4
-G indicates package is RoHS compliant (‘Green’)
Parameter
Value
Drain-to-source voltage
BV
DSS
Drain-to-gate voltage
BV
DGS
Gate-to-source voltage
±20V
Operating and storage temperature
-55°C to +150°C
Soldering temperature*
+300°C
Absolute Maximum Ratings are those values beyond which damage to the device may
occur. Functional operation under these conditions is not implied. Continuous operation
of the device at the absolute rating level may affect device reliability. All voltages are
referenced to device ground.
*
Distance of 1.6mm from case for 10 seconds.
GATE
SOURCE
DRAIN
TO-92 (N3)
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
SiTP
2 5 3 5
Y Y W W
TO-92 (N3)
Package may or may not include the following marks: Si or


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