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NE325S01-T1 Scheda tecnica(PDF) 2 Page - NEC

Il numero della parte NE325S01-T1
Spiegazioni elettronici  C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
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Produttore elettronici  NEC [NEC]
Homepage  http://www.nec.com/
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NE325S01-T1 Scheda tecnica(HTML) 2 Page - NEC

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NE325S01
2
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Gate to Source Leak Current
IGSO
0.5
10
µAVGS = –3 V
Saturated Drain Current
IDSS
20
60
90
mA
VDS = 2 V, VGS = 0 V
Gate to Source Cutoff Voltage
VGS(off)
–0.2
–0.7
–2.0
V
VDS = 2 V, ID = 100
µA
Transconductance
gm
45
60
mS
VDS = 2V, ID = 10 mA
Noise Figure
NF
0.45
0.55
dB
VDS = 2 V, ID = 10 mA, f = 12 GHz
Associated Gain
Ga
11.0
12.5
dB
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
250
200
150
100
50
0
50
100
150
200
250
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
TA - Ambient Temperature - ˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
100
80
60
40
20
0
3.0
1.5
VGS = 0 V
–0.2 V
–0.4 V
–0.6 V
–0.8 V
60
40
20
0
–2.0
–1.0
0
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
VGS - Gate to Source Voltage - V
f - Frequency - GHz
VDS = 2 V
MAXIMUM AVAILABLE GAIN, FORWARD
INSERTION GAIN vs. FREQUENCY
24
20
16
12
8
4
130
24
20
6
8 10
14
VDS = 2 V
ID = 10 mA
MSG.
MAG.
|S21S|
2


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