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2SK975 Scheda tecnica(PDF) 5 Page - Hitachi Semiconductor |
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2SK975 Scheda tecnica(HTML) 5 Page - Hitachi Semiconductor |
5 / 8 page 2SK975 5 1000 500 200 100 50 20 10 0.05 0.1 0.5 5 Reverse Drain Current IDR (A) 1.0 0.2 2 Body to Drain Diode Reverse Recovery Time di/dt = 50 A/ µs, Ta = 25°C VGS = 0 Pulse Test Typical Capacitance vs. Drain to Source Voltage 1000 300 100 30 3 1 010 20 50 Drain to Source Voltage VDS (V) 30 10 40 VGS = 0 f = 1 MHz Ciss Coss Crss 100 80 60 40 20 02 6 8 Gate Charge Qg (nc) 4 20 16 12 8 4 Dynamic Input Characteristics 10 0 VDS VGS VDD = 50 V 10 V 25 V VDD = 50 V 25 V 10 V ID = 1.5 A Switching Characteristics 100 50 20 10 2 1 0.05 0.1 0.5 5 Drain Current ID (A) 1.0 0.2 2 5 td (off) tf VGS = 10 V VDD = 30 V PW = 2 µs, duty < 1 % td (on) tr • • |
Codice articolo simile - 2SK975 |
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Descrizione simile - 2SK975 |
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