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2SK1671 Scheda tecnica(PDF) 2 Page - Hitachi Semiconductor |
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2SK1671 Scheda tecnica(HTML) 2 Page - Hitachi Semiconductor |
2 / 8 page 2SK1671 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage V DSS 250 V Gate to source voltage V GSS ±30 V Drain current I D 30 A Drain peak current I D(pulse)* 1 120 A Body to drain diode reverse drain current I DR 30 A Channel dissipation Pch* 2 125 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at T C = 25°C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V (BR)DSS 250 — — V I D = 10 mA, VGS = 0 Gate to source breakdown voltage V (BR)GSS ±30 ——V I G = ±100 µA, VDS = 0 Gate to source leak current I GSS —— ±10 µAV GS = ±25 V, VDS = 0 Zero gate voltage drain current I DSS — — 250 µAV DS = 200 V, VGS = 0 Gate to source cutoff voltage V GS(off) 2.0 — 3.0 V I D = 1 mA, VDS = 10 V Static drain to source on state resistance R DS(on) — 0.075 0.095 Ω I D = 15 A, VGS = 10 V * 1 Forward transfer admittance |y fs| 1220— S I D = 15 A, VDS = 10 V * 1 Input capacitance Ciss — 3000 — pF V DS = 10 V, VGS = 0, Output capacitance Coss — 1250 — pF f = 1 MHz Reverse transfer capacitance Crss — 170 — pF Turn-on delay time t d(on) — 45 — ns I D = 15 A, VGS = 10 V, Rise time t r — 170 — ns R L = 2 Ω Turn-off delay time t d(off) — 250 — ns Fall time t f — 130 — ns Body to drain diode forward voltage V DF — 1.0 — V I F = 30 A, VGS = 0 Body to drain diode reverse recovery time t rr — 400 — ns I F = 30 A, VGS = 0, di F/dt = 100 A/µs Note 1. Pulse test |
Codice articolo simile - 2SK1671 |
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Descrizione simile - 2SK1671 |
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