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2SK1299 Scheda tecnica(PDF) 6 Page - Hitachi Semiconductor |
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2SK1299 Scheda tecnica(HTML) 6 Page - Hitachi Semiconductor |
6 / 9 page 2SK1299(L), 2SK1299(S) 6 500 200 100 50 20 10 5 0.1 0.2 1 10 Reverse Drain Current IDR (A) 2 0.5 5 Body to Drain Diode Reverse Recovery Time di/dt = 50 A/ µs VGS = 0, Ta = 25°C Pulse Test Typical Capacitance vs. Drain to Source Voltage 1000 100 10 1 010 20 50 Drain to Source Voltage VDS (V) 30 40 VGS = 0 f = 1 MHz Ciss Coss Crss 200 160 120 80 40 08 24 32 Gate Charge Qg (nc) 16 20 16 12 8 4 Dynamic Input Characteristics 40 0 VDS VGS VDD = 80 V 50 V 25 V ID = 3 A VDD = 25 V 50 V 80 V Switching Characteristics 500 200 100 50 10 5 0.1 0.2 1 10 Drain Current ID (A) 2 0.5 5 20 td (off) VGS = 10 V, VDD PW = 2 µs, duty < 0.1 % td (on) tf tr = . . 30 V |
Codice articolo simile - 2SK1299 |
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Descrizione simile - 2SK1299 |
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