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2SK1151L Scheda tecnica(PDF) 5 Page - Hitachi Semiconductor |
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2SK1151L Scheda tecnica(HTML) 5 Page - Hitachi Semiconductor |
5 / 9 page 2SK1151(L)(S), 2SK1152(L)(S) 5 20 16 12 8 4 0 4 8 12 16 20 Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 1 A ID = 0.5 A Pulse Test 2 A 100 50 20 10 1 0.1 0.2 0.5 1.0 5 Drain Current ID (A) 0.05 Static Drain to Source on State Resistance vs. Drain Current Pulse Test 15 V VGS = 10 V 2 5 2 10 8 6 4 2 0 0 40 80 120 160 Case Temperature TC (°C) –40 Static Drain to Source on State Resistance vs. Temperature VGS = 10 V Pulse Test ID = 2 A 0.5 A 1 A Forward Transfer Admittance vs. Drain Current 5 2 1.0 0.5 0.05 0.1 0.2 1.0 2 5 Drain Current ID (A) 0.1 0.2 0.5 VDS = 20 V Pulse Test 75°C –25°C TC = 25°C |
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