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ST3414A Scheda tecnica(PDF) 2 Page - Stanson Technology |
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ST3414A Scheda tecnica(HTML) 2 Page - Stanson Technology |
2 / 6 page ST3414A N Channel Enhancement Mode MOSFET 3.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST3414A 2012. V1 ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±12 V Continuous Drain CurrentTJ=150℃) TA=25℃ TA=70℃ ID 3.0 2.2 A Pulsed Drain Current IDM 30 A Continuous Source Current (Diode Conduction) IS 1.2 A Power Dissipation TA=25℃ TA=70℃ PD 1.25 0.8 W Operation Junction Temperature TJ -55/150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 125 ℃/W |
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